=================================DOI:10．13290/j．cnki．bdtjs．2023．03．006218半导体技术第48卷第3期2023年3月L波段1500WGaN功率放大器史强，要志宏*，蒙燕强，曹欢欢(中国电子科技集团公司第十三研究所，石家庄050051)摘要:基于0.5μmGaN高电子迁移率晶体管(HEMT)工艺对GaN芯片结构进行了改进。通过优化场板参数提高击穿电压，通过优化接地孔分布方式降低管芯热阻，设计了单指栅宽1500μm、总栅宽120mm的改进型GaNHEMT。该芯片具有高击穿电压305V、低热阻0.19℃/W及高功率密度15W/mm。采用该GaNHEMT芯片设计了一款L波段功率放大器，采用预匹配技术实现功率放大器高阻抗变换比。经测试，在1.2～1.4GHz，该功率放大器在栅极电压－1.9V，漏极电压100V、脉宽100μs、占空比5%的工作条件下，输出功率大于1500W，功率增益大于15dB，功率附加效率大于70%。关键词:L波段;GaN高电子迁移率晶体管(HEMT);场板结构;结温;预匹配中图分类号:TN722.75;TN454文献标识码:A文章编号:1003－353X(2023)03－0218－06L-Band1500WGaNPowerAmplifierShiQiang，YaoZhihong*，MengYanqiang，CaoHuanhuan(The13thResearchInstitute，CETC，Shijiazhuang050051，China)Abstract:ThestructureoftheGaNchipwasoptimizedbasedon0.5μmGaNhighelectronmobilitytransistor(HEMT)process．TheimprovedGaNHEMTchipwithasinglefingergatewidthof1500μmandatotalgatewidthof120mmwasdesignedbyoptimizingthefieldplateparametersandthedistributionofthegroundingholestoincreasethebreakdownvoltageandreducethethermalresistanceofthechiprespec-tively．Thechiphasahighbreakdownvoltageof305V，alowthermalresistanceof0.19℃/Wandahighpowerdensityof15W/mm．AL-bandpoweramplifierwasdesignedbyusingtheGaNHEMTchip，andthehighimpedanceconversionratioofthepoweramplifierwasrealizedbypre-matchingtechnology．Thetestresultsshowthatat1.2－1.4GHz，theoutputpoweroftheamplifierismorethan1500W，thepowergainismorethan15dB，andthepoweradditionalefficiencyismorethan70%undertheoperatingcondi-tionsof－1.9Vgatevoltage，100Vdrainvoltagewiththepulsewidthof100μsanddutyratioof5%．Keywords:L-band;GaNhighelectronmobilitytransistor(HEMT);fieldplatestructure;junctiontemperature;pre-matchingEEACC:1220;2220J0引言经过近20年的发展，基于SiC的GaN微波功...
