中国集成电路设计ChinalntegratedCircuitCIChttps：//www.cicmag.com（总第290期）2023·7·具有浮动结调制的SiC中子探测器研究韩超西安电子科技大学芜湖研究院摘要：碳化硅（SiC）具有禁带宽度大、临界位移阈能高、临界击穿电场强以及热导率高等特性，被认为是高能中子探测的优选材料。目前SiC中子探测器主要采用内含本征（intrinsic）层结构的PN结二极管（PiN）或肖特基二极管形式，其灵敏区结构简单，需要施加高的反偏压才能获得高的探测效率，而高反偏压常会带来可靠性问题。本文基于美国新思公司的Sentaurus计算机辅助设计技术（TCAD）工具进行数值仿真，从灵敏区结构优化入手，研究了一种在灵敏区中内嵌浮动结（FJ）的PiN结构SiC中子探测器。仿真结果表明，浮动结的引入一方面能够优化灵敏区的纵向结构电场，使整体电场分布更加均匀，同时降低了近表面处的最大峰值电场强度，从而提高了探测器的工作可靠性。另一方面，浮动结能够加速灵敏区的耗尽，并在自身达到全耗尽的情况下，使探测器在较低偏压下实现电荷收集效率（CCE）的显著提升。关键词：SiC；中子探测器；全耗尽；浮动结；电荷收集效率StudyonFloating-Junction-ModulatedActiveVolumeforSiC-basedNeutronDetectorHANChaoXidian-WuhuResearchInstituteAbstract:Siliconcarbide（SiC）hasbeenconsideredasthepreferredmaterialforhighenergyneutronsdetectionduetoitssuperiorproperties,suchaswidebandgap,highdisplacementthresholdenergy,highbreakdownelectricfieldandexcellentthermalconductivity.Usually,aquitehighreversebiasisrequiredtoachievehighdetectionefficiencyforaPiNorSchottkybaseddetectorinvolvingasingleepilayeractingastheactivevolume,however,inevitablyresult-inginreliabilityissuesintermsofextraleakageandprematurebreakdowninducedbyhighfieldcrowding.Inthispaper,anovelSiCPiN-typedetectorwithfloatingjunction（FJ）layerisproposedandinvestigatedusingnumerical61CIC中国集成电路ChinalntegratedCircuit设计（总第290期）2023·7·https：//www.cicmag.comsimulation.TheintroductionofFJrealizesaglobalhomogenizationoftheelectricfieldinthe100μm-thickepilayer,accompaniedbyanobviousreductioninmaximumpeakelectricfieldnearthesurface.Inaddition,FJcanhelptocreateaquickerdepletionfortheepilayerlocatedbelowtheFJ.Itisqualitati...
