18Megabit(512Kx16-Bit)Multi-PurposeFlashSST39VF800Q/SST39VF800AdvanceInformation12345678910111213141516©1999SiliconStorageTechnology,Inc.TheSSTlogoandSuperFlashareregisteredtrademarksofSiliconStorageTechnology,Inc.MPFisatrademarkofSiliconStorageTechnology,Inc.343-042/99Thesespecificationsaresubjecttochangewithoutnotice.FEATURES:•Organizedas512KX16•Single2.7-3.6VReadandWriteOperations•VDDQPowerSupplytoSupport5VI/OforSST39VF800Q-VDDQnotavailableonSST39VF800•SuperiorReliability-Endurance:100,000Cycles(typical)-Greaterthan100yearsDataRetention•LowPowerConsumption:-ActiveCurrent:15mA(typical)-StandbyCurrent:3µA(typical)-AutoLowPowerMode:3µA(typical)•SmallSectorEraseCapability(256sectors)-Uniform2KWordsectors•BlockEraseCapability(16blocks)-Uniform32KWordblocks•FastReadAccessTime:-70and90ns•LatchedAddressandData•FastSectorEraseandWordProgram:-SectorEraseTime:18ms(typical)-BlockEraseTime:18ms(typical)-ChipEraseTime:70ms(typical)-WordProgramtime:14µs(typical)-ChipRewriteTime:8seconds(typical)•AutomaticWriteTiming-InternalVPPGeneration•EndofWriteDetection-ToggleBit-Data#Polling•CMOSI/OCompatibility•JEDECStandard-FlashEEPROMPinoutsandcommandsets•PackagesAvailable-48-PinTSOP(12mmx20mm)-6x8BallTFBGAPRODUCTDESCRIPTIONTheSST39VF800Q/VF800devicesare512Kx16CMOSMulti-PurposeFlash(MPF)manufacturedwithSST’sproprietary,highperformanceCMOSSuperFlashtechnology.Thesplit-gatecelldesignandthickoxidetunnelinginjectorattainbetterreliabilityandmanufacturabilitycomparedwithalternateapproaches.TheSST39VF800Q/VF800write(ProgramorErase)witha2.7-3.6Vpowersupply.TheSST39VF800Q/VF800conformtoJEDECstandardpinoutsforx16memories.Featuringhighperformancewordprogram,theSST39VF800Q/VF800devicesprovideatypicalwordprogramtimeof14µsec.Theentirememorycantypi-callybeerasedandprogrammedword-by-wordin8seconds,whenusinginterfacefeaturessuchasToggleBitorData#PollingtoindicatethecompletionofProgramoperation.Toprotectagainstinadvertentwrite,theSST39VF800Q/VF800haveon-chiphardwareandsoft-waredat...
