芯片制造工艺流程简介.pptVIP免费

ChipProductionManagementTeam/3ESemiconductorIdeaVelocityCompletionLED芯片制造工艺流程简介范青青2011年5月18日ChipProductionManagementTeam/3ESemiconductorIdeaVelocityCompletion主要内容LED的简单介绍LED芯片制造流程简介ChipProductionManagementTeam/3ESemiconductorIdeaVelocityCompletionLED是LightEmittingDiode的英文缩写，中文称为发光二极管。发光二极管(LED)是由数层很薄的搀杂半导体材料制成，一层带过量的电子，另一层因缺乏电子而形成带正电的“空穴”，当有电流通过时，电子和空穴相互结合并释放出能量，从而辐射出光芒。LED的简单介绍：ChipProductionManagementTeam/3ESemiconductorIdeaVelocityCompletionLED芯片的应用：ChipProductionManagementTeam/3ESemiconductorIdeaVelocityCompletionLED芯片制造流程示意图：蓝宝石衬底（Al2O3)（衬底厂商提供）PSS工艺PatternedSapphireSubstrate图形化蓝宝石衬底减小反向漏电，提高LED寿命，增强发光亮度ChipProductionManagementTeam/3ESemiconductorIdeaVelocityCompletion生长外延层（EPI）蓝宝石衬底N-GaNP-GaN芯片前段工艺（wafer）芯片后段工艺（chip）ChipProductionManagementTeam/3ESemiconductorIdeaVelocityCompletion封装ChipProductionManagementTeam/3ESemiconductorIdeaVelocityCompletion台阶光刻前清洗•打印流程卡、标签、分批次•防止混片•清洁晶片表面•防止台阶光刻后图形不标准ChipProductionManagementTeam/3ESemiconductorIdeaVelocityCompletionMesa光刻•用光刻胶做出Mesa图形•PR保护P型层，露出N电极位置N-GaN蓝宝石衬底P-GaNPRChipProductionManagementTeam/3ESemiconductorIdeaVelocityCompletionMesa干法刻蚀•无光刻胶保护的地方被刻蚀到N型层•露出N电极处的外延层N-GaN蓝宝石衬底P-GaNPRN电极处发光区切割道ChipProductionManagementTeam/3ESemiconductorIdeaVelocityCompletionCBL沉积•CBL(CurrentBlockingLayer)电流阻挡层•具有扩展表面电流作用CBL光刻有光刻胶无光刻胶ChipProductionManagementTeam/3ESemiconductorIdeaVelocityCompletionCBL蚀刻•采用湿法蚀刻（氢氟酸）•将没有光刻胶保护的地方的SiO2蚀刻掉SiO2外延N型层外延P型层ChipProductionManagementTeam/3ESemiconductorIdeaVelocityCompletionITO沉积•ITO（铟锡氧化物），导电性和透光性好•作为电流扩展...