第45卷第4期压电与声光Vol.45No.42023年8月PIEZOELECTRICS&ACOUSTOOPTICSAug.2023收稿日期:2023-06-24作者简介:蒋世义(1981-),男,重庆市人,高级工程师,硕士,主要从事微声技术及相关器件研发、设计、应用的研究。文章编号:1004-2474(2023)04-0535-05DOI:10.11977/j.issn.1004-2474.2023.04.011C波段宽带薄膜体声波滤波器设计及验证蒋世义1,蒋平英1,2,马晋毅1,陈彦光1,徐阳1,刘娅1,徐溢2(1.中国电子科技集团公司第二十六研究所,重庆400060;2.重庆大学光电学院,重庆400044)摘要:介绍了一种适用于三维堆叠的凸点式晶圆级封装的小型化C波段宽带薄膜体声波滤波器的设计方法,并进行了工艺验证。通过对压电层薄膜进行钪掺杂、材料参数提取、结构模型优化实现了相对带宽大于5%的薄膜体声波滤波器设计。通过表面硅基微机电系统(MEMS)工艺制备与凸点式晶圆级封装实现滤波器制备。研制出标称频率5800MHz、插入损耗小于2.8dB、阻带抑制大于40dBc、体积仅1.0mm×1.0mm×0.35mm的C波段宽带薄膜体声波滤波器。关键词:薄膜体声波谐振器(FBAR);宽带;高抑制度中图分类号:TN75文献标志码:ADesignandVerificationofCBandBroadbandThin-FilmBulkAcousticWaveFilterJIANGShiyi1,JIANGPingying1,2,MAJinyi1,CHENYanguang1,XUYang1,XUYang1,LIUYa1,XUYi2(1.The26thInstituteofChinaElectronicsTechnologyGroupCorporation,Chongqing400060;2.CollegeofOptoelectronics,ChongqingUniversity,Chongqing400044)Abstract:ThedesignmethodofaminiaturizedCbandbroadbandthin-filmbulkacousticwavefiltersuitableforbumpedwaferlevelpackagingwiththree-dimensionalstackingisintroduced,andtheprocessvalidationiscarriedout.Thedesignofthin-filmbulkacousticwavefilterwitharelativebandwidthofmorethan5%wasrealizedthroughscandiumdoping,materialparameterextractionandstructuralmodeloptimizationofthepiezoelectricfilm.Thefiltersarefabricatedbythesurfacesiliconbasedmicro-electro-mechanicalsystems(MEMS)processandbumpedwaferlevelpackaging.ACbandbroadbandthin-filmbulkacousticwavefilterwithanominalfrequencyof5800MHz,insertionlossoflessthan2.8dB,stopbandsuppressionofgreaterthan40dBcandasizeofonly1.0mm×1.0mm×0.35mmhasbeendeveloped.Keywords:filmbulkacousticresonator(FBAR);broadband;highsuppression0引言现代通讯电磁环境错综复杂,对通讯设备...
