第21卷第8期2023年8月太赫兹科学与电子信息学报JournalofTerahertzScienceandElectronicInformationTechnologyVol.21，No.8Aug.，20232~6GHz紧凑型、高效率GaNMMIC功率放大器邬佳晟，蔡道民(中国电子科技集团公司第十三研究所，河北石家庄050051)摘要：基于0.25μmSiC衬底的GaN高电子迁移率晶体管(HEMT)工艺，根据有源器件的Gmax和输出功率密度，选择末级功率器件尺寸并确定其最优阻抗；采用三级放大器，其栅宽比为1:4:16，实现高功率增益和高效率；利用等Q匹配技术，把偏置电路融入匹配电路中，实现简单、低损耗和宽带阻抗变换；借助电磁场寄生参数提取技术实现紧凑型芯片版图，尺寸为2.8mm×2.0mm。测试结果表明，偏置条件漏极电压UD=28V、UG=-2.2V，在2~6GHz频率范围内，功率放大器增益大于24dB，饱和输出功率大于43dBm，功率附加效率大于45%，可广泛应用于电子对抗和电子围栏等领域。关键词：紧凑；功率附加效率；宽带；增益；微波单片集成电路中图分类号：TN43；TN722.75文献标志码：Adoi：10.11805/TKYDA20230142~6GHzcompactGaNpoweramplifierMMICswithhighPAEGHzcompactGaNpoweramplifierMMICswithhighPAEWUJiasheng，CAIDaomin(The13thResearchInstitute，CETC，ShijiazhuangHebei050051，China)AbstractAbstract：Basedonthe0.25μmSiCsubstrateGaNHighElectronMobilityTransistor(HEMT)process,thefinalpowerdevicesizeisselectedanditsoptimalimpedanceisdeterminedbytheGmaxandtheunitoutputpowerdensityoftheactivedevice.Thetertiaryamplifierisadopted,anditsgatewidthratiois1:4:16toachievehighpowergainandhighefficiency.Byusingtheequal-Q-matchingtechnique,andintegraingthebiascircuitintothematchingcircuit,animpedancetransformationisrealizedwithsimple,lowlossandbroadband.Withthehelpoftheextractionofparasiticparametersinelectromagneticfields,thecompactchipisrealized.ThechipsizeoftheMonolithicMicrowaveIntegratedCircuit(MMIC)amplifieris2.8mm×2.0mm.Thetestresultsshowthatinthe2~6GHzfrequencyrange,andundertheconditionsofthedrainvoltageof28V,thegatevoltage-2.2V,andcontinuouswave,thelargesignalgainoftheMMICamplifierisgreaterthan24dB,thesaturationoutputpowerisgreaterthan43dBm,andthePowerAdditionalEfficiency(PAE)isgreaterthan45%.Theproposedpaveramplifiercanbewidelyusedinelec...
