第42卷第4期2023年8月红外与毫米波学报J.InfraredMillim.WavesVol.42，No.4August，2023文章编号：1001-9014（2023）04-0468-08DOI：10.11972/j.issn.1001-9014.2023.04.007WavelengthextendedInGaAsBinearinfraredphotodetectorFENGDuo，DAIJin-Meng，CAOYou-Xiang，ZHANGLi-Yao*（DepartmentofPhysics，UniversityofShanghaiforScienceandTechnology，Shanghai200093，China）Abstract：InGaAsphotodetectoriswidelyusedinSWIRdetection.BiincorporationintoInGaAscanreducethebandgap，extendingthedetectionwavelength.BycontrollingoftheInandBicompositions，thedetectionwave⁃lengthcouldbeextendedtoover3µmfromInyGa1-yAs1-xBix，lattice-matchedtoInP.AnIn0.394Ga0.606As0.913Bi0.087p-i-nphotodetectorisdesignedanditsperformanceisnumericallyinvestigated.Darkcurrentsandresponsivityspec⁃traarecalculatedwithdifferenttemperatures，absorptionlayerthicknessesanddopingconcentrations.A50%cut⁃offwavelengthof3µmisachieved.TheproposedstructureprovidesafeasiblewaytofabricateInGaAsBibasedSWIRdetectorwithlongerdetectionwavelength.Keywords：InGaAsBi，darkcurrent，responsivity，SWIR波长拓展型InGaAsBi近红外探测器冯铎，代金梦，曹有祥，张立瑶*（上海理工大学物理系，上海200093）摘要：InGaAs光电探测器广泛应用于短波红外检测。在InGaAs中掺入Bi可以减小带隙，延长探测波长。通过控制In和Bi的组分可使InyGa1-yAs1-xBix与InP晶格匹配，同时，扩展探测波长至3µm以上。设计并研究了In0.394Ga0.606As0.913Bi0.087p-i-n光电探测器的光电性能。计算了不同温度、吸收层厚度和p（n）区掺杂浓度下的暗电流和响应率特性。获得了3µm的截止波长。该结构为拓展InP基晶格匹配的短波红外探测器的探测波长提供了一种可行的方法。关键词：铟镓砷铋；暗电流；响应率；短波红外中图分类号：TN215文献标识码：AIntroductionShort-waveinfrared（SWIR）detectorshavebeenwidelyusedinnightvision，opticalfibercommunicationsandenvironmentalmonitoring，etc［1］.Becauseofthehighopticalabsorptioncoefficientandcarriermobility，InGaAsshowsgoodperformanceinSWIRdetectionatroomtemperature.ThecutoffwavelengthofIn0.53Ga0.47Asdetectors，lattice-matchedtoInPis1.7µm.TheIncom‐positionisfurtherincreasedinInGaAsto...
