Designation:F533–02StandardTestMethodforThicknessandThicknessVariationofSiliconWafers1ThisstandardisissuedunderthefixeddesignationF533;thenumberimmediatelyfollowingthedesignationindicatestheyearoforiginaladoptionor,inthecaseofrevision,theyearoflastrevision.Anumberinparenthesesindicatestheyearoflastreapproval.Asuperscriptepsilon(e)indicatesaneditorialchangesincethelastrevisionorreapproval.INTRODUCTIONWhenthistestmethodwasdevelopedinthe1970s,non-contactthicknessgagesemployingmanualwaferpositioning,whicharethebasisofthistestmethod,wereinroutineuse.Morerecently,faster,automatedinstrumentshavereplacedthesemanualgagesformostcommonusesinthesemiconductorindustry.Intheseautomaticsystems,microprocessorsormicrocomputersareusedtocontrolwaferpositioning,operatetheinstrumentandtoanalyzethedata.SeeTestMethodF1530.Despitethefactthatthistestmethodisnotcommonlyusedinitspresentform,itembodiesallthebasicelementsofthistestmethodandasimpleanalysisofdata.Thus,itprovidesusefulguidanceinthefundamentalsandappplicationofdifferentialnon-contactwaferthicknessmeasurements.1.Scope1.1Thistestmethod2coversmeasurementofthethicknessofsiliconwafers,polishedorunpolished,andestimationofthevariationinthicknessacrossthewafer.1.2ThistestmethodisintendedprimarilyforusewithwafersthatmeetthedimensionandtolerancerequirementsofSEMISpecificationsM1.However,itcanbeappliedtocircularsilicon,wafersorsubstratesofanydiameterandthicknessthatcanbehandledwithoutbreaking.1.3Thistestmethodissuitableforbothcontactandcontactlessgagingequipment.Precisionstatementshavebeenestablishedforeach.1.4Thevaluesstatedininch-poundunitsaretoberegardedasstandard.Thevaluesinparenthesesareforinformationonly.1.5Thisstandarddoesnotpurporttoaddressallofthesafetyconcerns,ifany,associatedwithitsuse.Itistheresponsibilityoftheuserofthisstandardtoestablishappro-priatesafetyandhealthpracticesanddeterminetheapplica-bilityofregulatorylimitationspriortouse.2.ReferencedDocuments2.1ASTMStandards:F1530TestMethodforMeasuringFlatness,ThicknessandThickne...
