Designation:F1390–97StandardTestMethodforMeasuringWarponSiliconWafersbyAutomatedNoncontactScanning1ThisstandardisissuedunderthefixeddesignationF1390;thenumberimmediatelyfollowingthedesignationindicatestheyearoforiginaladoptionor,inthecaseofrevision,theyearoflastrevision.Anumberinparenthesesindicatestheyearoflastreapproval.Asuperscriptepsilon(e)indicatesaneditorialchangesincethelastrevisionorreapproval.1.Scope1.1Thistestmethodcoversanoncontacting,nondestructiveproceduretodeterminethewarpofclean,drysemiconductorwafers.1.2Thetestmethodisapplicabletowafers50mmorlargerindiameter,and100µm(0.004in.)approximatelyandlargerinthickness,independentofthicknessvariationandsurfacefinish,andofgravitationally-inducedwaferdistortion.1.3Thistestmethodisnotintendedtomeasuretheflatnessofeitherexposedsiliconsurface.Warpisameasureofthedistortionofthemediansurfaceofthewafer.1.4Thistestmethodmeasureswarpofawafercorrectedforallmechanicalforcesappliedduringthetest.Therefore,theproceduredescribedgivestheunconstrainedvalueofwarp.Thistestmethodincludesameansofcancelinggravity-induceddeflectionwhichcouldotherwisealtertheshapeofthewafer.2TheresultingparameterisdescribedbyWarp(2)inAppendixX2ShapeDecisionTreeinSEMISpecificationM1.(SeeAnnexA1.)NOTE1—TestMethodF657measuresmediansurfacewarpusingathree-pointback-surfacereferenceplane.Theback-surfacereferenceresultsinthicknessvariationbeingincludedintherecordedwarpvalue.Theuse(inthistestmethod)ofamediansurfacereferenceplaneeliminatesthiseffect.Theuse(inthistestmethod)ofaleast-squaresfitreferenceplanereducesthevariabilityintroducedinthree-pointplanecalculationsbychoiceofreferencepointlocation.Theuse(inthistestmethod)ofspecialcalibrationorcompensatingtechniquesminimizestheeffectsofgravity-induceddistortionofthewafer.1.5ThevaluesstatedinSIunitsaretoberegardedsepa-ratelyasthestandard.Thevaluesgiveninparenthesesareforinformationonly.1.6Thisstandarddoesnotpurporttoaddressallofthesafetyconcerns,ifany,associatedwithitsuse.Itistheresponsibilityoftheuserofth...
