Designation:F1192−11StandardGuidefortheMeasurementofSingleEventPhenomena(SEP)InducedbyHeavyIonIrradiationofSemiconductorDevices1ThisstandardisissuedunderthefixeddesignationF1192;thenumberimmediatelyfollowingthedesignationindicatestheyearoforiginaladoptionor,inthecaseofrevision,theyearoflastrevision.Anumberinparenthesesindicatestheyearoflastreapproval.Asuperscriptepsilon(´)indicatesaneditorialchangesincethelastrevisionorreapproval.ThisstandardhasbeenapprovedforusebyagenciesoftheU.S.DepartmentofDefense.1.Scope1.1Thisguidedefinestherequirementsandproceduresfortestingintegratedcircuitsandotherdevicesfortheeffectsofsingleeventphenomena(SEP)inducedbyirradiationwithheavyionshavinganatomicnumberZ≥2.Thisdescriptionspecificallyexcludestheeffectsofneutrons,protons,andotherlighterparticlesthatmayinduceSEPviaanothermechanism.SEPincludesanymanifestationofupsetinducedbyasingleionstrike,includingsofterrors(oneormoresimultaneousreversiblebitflips),harderrors(irreversiblebitflips),latchup(persistenthighconductingstate),transientsinducedincom-binatorialdeviceswhichmayintroduceasofterrorinnearbycircuits,powerfieldeffecttransistor(FET)burn-outandgaterupture.Thistestmaybeconsideredtobedestructivebecauseitofteninvolvestheremovalofdevicelidspriortoirradiation.Bitflipsareusuallyassociatedwithdigitaldevicesandlatchupisusuallyconfinedtobulkcomplementarymetaloxidesemiconductor,(CMOS)devices,butheavyioninducedSEPisalsoobservedincombinatoriallogicprogrammablereadonlymemory,(PROMs),andcertainlineardevicesthatmayre-spondtoaheavyioninducedchargetransient.Powertransis-torsmaybetestedbytheprocedurecalledoutinMethod1080ofMILSTD750.1.2TheproceduresdescribedherecanbeusedtosimulateandpredictSEParisingfromthenaturalspaceenvironment,includinggalacticcosmicrays,planetarytrappedions,andsolarflares.Thetechniquesdonot,however,simulateheavyionbeameffectsproposedformilitaryprograms.TheendproductofthetestisaplotoftheSEPcrosssection(thenumberofupsetsperunitfluence)asafunctionofionLET(linearenergytransferorio...
