=================================DOI:10．13290/j．cnki．bdtjs．2023．03．012262半导体技术第48卷第3期2023年3月悬浮区熔炉线圈后狭缝倾角对电磁场的影响郑万超，李聪，冯旭，李明佳(中国电子科技集团公司第四十六研究所，天津300220)摘要:为提高悬浮区熔(FZ)法的成品率，使用模拟计算软件研究了FZ硅单晶的生长过程。通过ComsolMultiphysics软件模拟了FZ炉线圈产生的电磁场，分析了线圈后狭缝倾角对电磁场的影响。随着线圈后狭缝倾角的增加，线圈台阶处和线圈底面坡面处的后狭缝位置向后狭缝倾斜方向偏移，导致后狭缝下方的磁场强度减弱，熔化的多晶硅表面和熔体自由表面的电磁能量等值线向后狭缝偏转方向偏移。结合熔化的多晶硅表面和熔体自由表面的电磁能量、电磁能量差与线圈后狭缝倾角的关系曲线，发现线圈后狭缝倾角为30°左右时，线圈产生的电磁场更有利于硅单晶生长。关键词:悬浮区熔(FZ)硅;线圈;后狭缝倾角;电磁场;熔化的多晶硅表面;熔体自由表面中图分类号:TF806.9文献标识码:A文章编号:1003－353X(2023)03－0262－06InfluenceoftheTiltAngleoftheFloatingZoneFurnaceCoilBackSlitontheElectromagneticFieldZhengWanchao，LiCong，FengXu，LiMingjia(The46thResearchInstitute，CETC，Tianjin300220，China)Abstract:Inordertoimprovetheyieldofthefloatingzone(FZ)method，thegrowthprocessofFZsiliconsinglecrystalwasstudiedbysimulationsoftware．TheelectromagneticfieldinducedbytheFZfur-nacecoilwassimulatedusingComsolMultiphysicssoftware，andtheinfluenceofthecoilbackslittiltan-gleontheelectromagneticfieldwasanalyzed．Withtheincreaseofthecoilbackslittiltangle，theposi-tionsofthebackslitonthecoilstepandcoilundersurfaceslopemovetowardthedeflectiondirectionofthebackslit．Asaresult，themagneticfieldintensitybelowthebackslitdecreases，andtheelectromag-neticenergycontourlinesonthemeltedpolysiliconsurfaceandthefreesurfaceofthemeltmovetowardthetiltdirection．Accordingtotherelationcurvesamongtheelectromagneticenergy，theelectromagneticenergydifferenceandthecoilbackslittiltangleonthemeltedpolysiliconsurfaceandthefreesurfaceofthemelt，itisfoundthattheelectromagneticfieldgeneratedbythecoilisbeneficialtothegrowthofthesiliconsinglecrystalwhenthecoilbackslittiltanglei...
