第46卷第1期2023年2月电子器件ChineseJournalofElectronDevicesVol.46No.1Feb．2023收稿日期:2021－09－24修改日期:2021－12－09DesignofActiveClampBidirectionalFlybackConverterBasedonGaNTransistorSHIYongsheng1*，LIJin1，ZHANGYaozhong2(1．SchoolofElectricalandControlEngineering，ShaanxiUniversityofScience＆Technology，Xi’anShaanxi710021，China;2．EconomicandTechnologicalＲesearchInstituteofStateGridGansuElectricPowerCompany，LanzhouGansu730050，China)Abstract:TheapplicationofGalliumNitride(GaN)powertransistorinbidirectionalDC－DCconverterisdesigned．Inrecentyears，GaN，thethirdgenerationofwidebandgappowersemiconductordevices，hasattractedextensiveattentioninpowerelectronicsapplica-tionsduetoitsadvantagesofsmallsize，highfrequencyandhighefficiency．Forthetwo-wayDC－DCconvertertoachievebidirectionalenergyefficienttransmissionunderportablesmallpowerapplicationscenarios，anactiveclampbi-directionalflybackconverterbasedonGaNdevicesisdesigned，anditsperformanceistested．Theworkingprincipleoftheconverter，switchmode，andtheconditiontorealizesoftswitchareintroducedindetailandanalyzed，andthemaincircuitparametersaredesigned．LTspicesoftwareisusedtobuildthesimulationmodel，andthesimulationresultsverifythattheconvertercanachievetheperformanceofsoftswitchingtubeunderlowpowerapplication．Finally，a20Wexperimentalprototypeisdesignedtoverifytheaccuracyandeffectivenessofthedesignedtopology，whichhashigherconversionefficiencythanthetraditionalSiMOSFETdevice．Keywords:GaNtransistor;powerelectronics;transferefficiency;softswitchingEEACC:1210;1290B;2520doi:10．3969/j．issn．1005－9490．2023．01．025基于GaN器件的有源箝位双向反激变换器设计史永胜1*，李锦1，张耀忠2(1．陕西科技大学电气与控制工程学院，西安710021;2．国网甘肃省电力公司经济技术研究院，兰州730050)摘要:文章针对氮化镓(GalliumNitride，GaN)功率晶体管在双向DC－DC变换器中的应用进行设计。近年来，第三代宽禁带功率半导体器件GaN凭借其体积小、高频、高效率等优势，在电力电子应用中得到了广泛的关注。为实现双向DC－DC变换器在便携式小功率应用场景下的能...
