===================================DOI:10．13290/j．cnki．bdtjs．2023．03．002190半导体技术第48卷第3期2023年3月混合键合技术在三维堆叠封装中的研究进展赵心然，袁渊，王刚，王成迁(中国电子科技集团公司第五十八研究所，江苏无锡214035)摘要:随着半导体技术的发展，传统倒装焊(FC)键合已难以满足高密度、高可靠性的三维(3D)互连技术的需求。混合键合(HB)技术是一种先进的3D堆叠封装技术，可以实现焊盘直径≤1μm、无凸点的永久键合。阐述了HB技术的发展历史、研究进展并预测了发展前景。目前HB技术的焊盘直径/节距已达到0.75μm/1.5μm，热门研究方向包括铜凹陷、圆片翘曲、键合精度及现有设备兼容等，未来将突破更小的焊盘直径/节距。HB技术将对后摩尔时代封装技术的发展起到变革性作用，在未来的高密度、高可靠性异质异构集成中发挥重要的作用。关键词:混合键合(HB);先进封装;三维(3D)堆叠;无凸点键合;范德华力中图分类号:TN305.94文献标识码:A文章编号:1003－353X(2023)03－0190－09ResearchProgressofHybridBondingTechnologyin3D-StackingPackagingZhaoXinran，YuanYuan，WangGang，WangChengqian(The58thResearchInstitute，CETC，Wuxi214035，China)Abstract:Withthedevelopmentofsemiconductortechnology，thetraditionalflip-chip(FC)bondinghasbecomedifficulttomeettherequirementsofthree-dimensional(3D)interconnectiontech-nologywithhighdensityandhighreliability．Hybridbonding(HB)technologyisanadvanced3D-stackingpackagingtechnology，whichcanachievepermanentbondingwithpaddiameter≤1μmandwithoutbumps．Thedevelopmenthistory，researchprogressanddevelopmentprospectofHBtechnologyaredescribed．Currently，HBtechnologycanrealizepaddiameter/pitchof0.75μm/1.5μm．PopularresearchdirectionsincludeCurecess，waferwarpage，bondingaccuracyandexistingequipmentcompati-bility，etc．Inthefuture，therewillbebreakthroughinsmallerpaddiameter/pitch．HBtechnologywillplayarevolutionaryroleinthedevelopmentofpackagingtechnologyinpost-Moorelawperiod，andwillplayasignificantroleinhigh-densityandhigh-reliabilityheterogeneousintegrationinthefuture．Keywords:hybridbonding(HB);advancedpackaging;three-dimensional(3D)stacking;bumplessbonding;vanderWaalsforceEEACC:0170J0引言随着...
