第59卷第1期2023年1月南京大学学报(自然科学)(NATURALSCIENCE)Vol.59,No.1Jan.,2023JOURNALOFNANJINGUNIVERSITY基于GaAspHEMT工艺的宽带6位数字移相器MMIC周守利1*,顾磊1,2,张景乐1,吴建敏1(1.浙江工业大学信息工程学院,杭州,310023;2.杭州萧山技师学院,杭州,311201)摘要:基于0.15μmGaAspHEMT(pseudomorphicHighElectronMobilityTransistor)工艺,研制了一款6位数字移相器微波单片集成电路(MonolithicMicrowaveIntegratedCircuit,MMIC).该移相器由六个基本移相位级联组成,工作频带为10~18GHz,步进值为5.625°,移相范围为0~360°,具有64个移相态.根据最优拓扑选择理论,5.625°,11.25°,22.5°移相位采用桥T型结构,降低了移相器的插损及面积;采用开关型高低通滤波器结构实现45°,90°,180°移相位,提高了大移相位的移相精度,并有效降低了寄生调幅.实测结果表明:64态移相寄生调幅均方根误差小于0.6dB,移相输入输出回波损耗低于-11dB,移相均方根误差小于4.2°,基态插入损耗低于8.6dB.芯片尺寸为3.35mm×1.40mm.该数字移相器具有宽频带、高移相精度、尺寸小的特点,主要用于微波相控阵T/R组件、无线通信等领域.关键词:GaAspHEMT,宽带,数字移相器,微波单片集成电路中图分类号:TN432文献标志码:AAwideband6bitdigitalphaseshifterMMICbasedonGaAspHEMTprocessZhouShouli1*,GuLei1,2,ZhangJingle1,WuJianmin1(1.CollegeofInformationEngineering,ZhejiangUniversityofTechnology,Hangzhou,310023,China;2.HangzhouXiaoshanTechnicianCollege,Hangzhou,311201,China)Abstract:Thispaperproposeda10~18GHzwideband6⁃bitdigitalphaseshifterMMIC(MonolithicMicrowaveIntegratedCircuit)designedin0.15μmGaAspHEMT(pseudomorphicHighElectronMobilityTransistor)technology.Thephaseshifterwascomposedofsixbasicbits,whichrealizes64phase⁃shiftingstateswithastepvalueof5.625°andprovidesaphase⁃shiftingrangeof0~360°.Consideringthestructuraltopologyoptimization,thebridge⁃Tstructureisadoptedfor5.625°,11.25°and22.5°phasebitstoreducestheinsertionlossandareaofthephaseshifter.Theswitchtypehigh⁃lowpassfilterstructureisemployedtorealize45°,90°and180°phasebits,whichimprovestheaccuracyofphaseandamplitude.Themeasurementresultsshowthatintherangeof10~18GHz,thein...