收稿日期:2022-11-05.基金项目:国家自然科学基金项目(11702251);河南省博士后科研基金项目(202003091);河南省高等学校重点科研项目(22A130008).*通信作者:张巧云E-mail:zhangqy@zzu.edu.cn材料、结构及工艺DOI:10.16818/j.issn1001-5868.2022110503GaN压电半导体杆的非线性动态响应研究谭宁,马泽龙,张巧云*(郑州大学力学与安全工程学院,郑州450001)摘要:利用有限元分析方法,研究了p型GaN压电半导体杆在简谐力作用下的拉伸振动问题,得到了位移、电势和空穴浓度非线性动态响应的数值解,并分析了简谐力对p型GaN压电半导体杆力电耦合性能的调控作用。研究结果表明,简谐力显著地影响压电半导体杆内力电场的分布情况:由于电流密度中的电非线性项,电场和空穴浓度的分布失去对称性或反对称性;力电场在简谐力驱动下表现为周期性变化,但空穴浓度的动态响应表现为明显的非对称波动。关键词:压电半导体杆;非线性;动态拉伸;多场耦合中图分类号:TN304.2文章编号:1001-5868(2023)01-0064-06StudyonNonlinearDynamicResponseofGaNPiezoelectricSemiconductorRodTANNing,MAZelong,ZHANGQiaoyun(SchoolofMechanicsandSafetyEngineering,ZhengzhouUniversity,Zhengzhou450001,CHN)Abstract:Thefiniteelementmethodwasusedtostudytheproblemoftensilevibrationofp-typeGaNpiezoelectricsemiconductorrodundertheactionofsimpleharmonicforce.Numericalsolutionsforthenonlineardynamicresponsesofdisplacement,electricpotentialandholeconcentrationwereobtained.Themodulatingeffectofsimpleharmonicforceonp-typeGaNpiezoelectricsemiconductorrodwasanalyzed.Theresultsshowthatthesimpleharmonicforcesignificantlyaffectsthedistributionofphysicalfieldsintherod.Thedistributionsoftheelectricfieldandholeconcentrationlosetheirsymmetryoranti-symmetryduetotheelectricallynonlinearterminthecurrentdensity.Theelectricfieldsexhibitperiodicvariationsdrivenbythesimpleharmonicforce.However,thedynamicresponseofholeconcentrationexhibitssignificantasymmetricfluctuations.Keywords:piezoelectricsemiconductorrod;nonlinearity;dynamicstretching;multi-fieldcoupling0引言压电半导体(如ZnO,GaN,AlN等)因其独特的压电性与半导体特性的耦合性质,在新型智能和多功能电子器件领域具有重要的应用[1-2]。相较于通过施加偏置电压控制内部载流子运输的传统...
