=================================DOI:10．13290/j．cnki．bdtjs．2023．03．008March2023SemiconductorTechnologyVol．48No．3231SiIGBT和SiCMOSFET分立器件封装可靠性对比张莹1，谢露红1，邓二平2，*，严雨行1，赵雨山1，黄永章1(1．新能源电力系统国家重点实验室(华北电力大学)，北京102206;2．合肥工业大学电气与自动化工程学院，合肥230009)摘要:为了明确SiC金属－氧化物－半导体场效应晶体管(MOSFET)与Si绝缘栅双极型晶体管(IGBT)寿命差异的原因，在相同结温条件下对上述两种分立器件进行功率循环试验。试验结果表明，SiCMOSFET的寿命大于SiIGBT的寿命。若将两组试验负载电流等效一致，则SiCMOSFET的寿命约为SiIGBT的1/4。为了揭示寿命差异的根本原因，即失效机理的探究，建立了两种器件电－热－力多物理场有限元模型并在功率循环试验条件下进行仿真，结果表明造成寿命差异的原因是Si、SiC材料与铝材料之间的热膨胀系数差异不同，导致器件在功率循环中受到循环热应力时产生的塑性应变不同。研究结果为提高SiCMOSFET的寿命提供了理论参考。关键词:SiC;分立器件;功率循环;寿命;有限元模型;机理分析中图分类号:TN306文献标识码:A文章编号:1003－353X(2023)03－0231－09ComparisononPackageReliabilityofSiIGBTandSiCMOSFETDiscreteDevicesZhangYing1，XieLuhong1，DengErping2，*，YanYuxing1，ZhaoYushan1，HuangYongzhang1(1．StateKeyLaboratoryofAlternateElectricalPowerSystemwithRenewableEnergySources(NCEPU)，Beijing102206，China;2．SchoolofElectricalEngineeringandAutomation，HefeiUniversityofTechnology，Hefei230009，China)Abstract:PowercyclingtestswereperformedonSiCmetal-oxide-semiconductorfieldeffecttran-sistor(MOSFET)andSiinsulatedgatebipolartransistor(IGBT)discretedevicesunderthesametemperatureconditionstofindoutthereasonforthelifetimedifferencebetweentwotypesofdiscretedevices．TheresultshowsthatlifetimeofSiCMOSFETislongerthanthatofSiIGBT．ThelifetimeoftheSiCMOSFETisabout1/4thatoftheSiIGBTifthetwosetsofexperimentalloadcurrentsareequivalent．Inordertorevealthereasonsforthelifetimedifference，thefailuremechanismwasexplored．Twoelectric-thermal-mechanicalmulti-physicsfieldfiniteelementmodelswereestablishedandsimulatedunderpowercyclingconditions．Thesimulationr...
