火工品INITIATORS&PYROTECHNICS文章编号:1003-1480(2023)01-0032-05Al/CuO含能薄膜换能芯片薄膜反应的模拟分析杨骁1,刘凤丽1,刘双杰2,王洪星2,郝永平2(1.沈阳理工大学机械工程学院,辽宁沈阳,110158;2.沈阳理工大学装备工程学院,辽宁沈阳,110158)摘要:为了探究含能薄膜在换能元火工品点火过程中的点燃机制,建立Al/CuO含能薄膜换能芯片结构的傅里叶传热模型,利用COMSOL仿真软件对不同电压或电容条件下含能薄膜换能芯片的点火过程进行数值模拟,对比分析电容或电压对含能薄膜温升曲线的影响。仿真结果表明:提高电压或电容使得含能薄膜温升曲线峰值增高或延长,两者都能扩大薄膜反应区域;电容与电压增大或减小均影响半导体桥对含能薄膜的传热效率,导致含能薄膜的温升曲线相对于半导体桥具有滞后性与相似性。关键词:含能薄膜;换能芯片;传热模型;薄膜反应中图分类号:TJ45+6文献标识码:ADOI:10.3969/j.issn.1003-1480.2023.01.007SimulationAnalysisofThinFilmReactionforAl/CuOEnergeticThinFilmEnergyConversionChipYANGXiao1,LIUFeng-li1,LIUShuang-jie2,WANGHong-xing2,HAOYong-ping2(1.CollegeofMechanicsEngineering,ShenyangLigongUniversity,Shenyang,110158;2.CollegeofEquipmentEngineering,ShenyangLigongUniversity,Shenyang,110158)Abstract:Inordertoexploretheignitionmechanismofenergeticthinfilmintheignitionprocessofenergyconversionelementinitiatingexplosivedevices,theFourierheattransfermodelofAl/CuOenergeticthinfilmenergyconversionchipstructurewasestablished.TheignitionprocessofenergeticthinfilmenergyconversionchipunderdifferentvoltageorcapacitanceconditionswasnumericallysimulatedbyCOMSOLsimulationsoftware,andtheinfluenceofcapacitanceorvoltageonthetemperaturerisecurveofenergeticthinfilmwascomparedandanalyzed.Thesimulationresultsshowthatincreasingthevoltageorcapacitancecanincreaseorprolongthepeakvalueofthetemperaturerisecurveoftheenergeticthinfilm,andbothofthemcanenlargetheareaofthethinfilmreaction;Whenthecapacitanceandvoltageincreaseordecrease,theheattransferefficiencyofthesemiconductorbridgetotheenergeticthinfilmisaffected,resultinginthehysteresisandsimilarityofthetemperaturerisecurveoftheenergeticthinfilmrelativet...