================================DOI:10．13290/j．cnki．bdtjs．2023．03．005March2023SemiconductorTechnologyVol．48No．3213200mm超薄硅片边缘抛光技术武永超，史延爽，王浩铭，龚一夫，张旭，赵权*(中国电子科技集团公司第四十六研究所，天津300220)摘要:在大尺寸硅片外延加工过程中，边缘损伤极易导致外延层位错的产生。厚度为450μm的超薄硅片因其机械强度较低，在边缘抛光过程中极易导致碎片产生。为此采用化学机械抛光(CMP)对8英寸(1英寸=2.54cm)超薄硅片进行边缘抛光，通过优化工艺参数改善硅片边缘粗糙度及过抛量，并讨论了边缘抛光前后硅片倒角角度及边缘残余应力的变化。结果表明边缘抛光工序对硅片边缘去除量较小，且仅对边缘损伤层起到去除作用，因此可以有效降低硅片边缘残余应力，而对倒角角度影响较小，有助于获得边缘质量较好的硅片，为后续外延加工打下良好基础。关键词:边缘抛光;大尺寸超薄硅片;化学机械抛光(CMP);边缘损伤;边缘粗糙度中图分类号:TN305.2文献标识码:A文章编号:1003－353X(2023)03－0213－05EdgePolishingTechnologyfor200mmUltra-ThinSiliconWaferWuYongchao，ShiYanshuang，WangHaoming，GongYifu，ZhangXu，ZhaoQuan*(The46thResearchInstitute，CETC，Tianjin300220，China)Abstract:Duringtheepitaxialprocessingoflarge-sizesiliconwafers，theedgedamagecaneasilyleadtothegenerationofepitaxiallayerdislocations．Theultra-thinsiliconwaferwithathicknessof450μmisveryeasytocausedebrisduringtheedgepolishingprocessduetoitslowmechanicalstrength．Therefore，theedgepolishingof8inch(1inch=2.54cm)ultra-thinsiliconwaferswascarriedoutbychemicalmechanicalpolishing(CMP)，andtheedgeroughnessandover-polishingamountofsiliconwaferswerereducedbyoptimizingprocessparameters．Thechangesofthechamferingangleandedgere-sidualstressofsiliconwafersbeforeandafteredgepolishingwerediscussed．Theresultsshowthattheedgepolishingprocesshasasmallerremovalamountontheedgeofthesiliconwafer，andonlyremovestheedgedamagelayer．Itcaneffectivelyreducetheresidualstressontheedgeofsiliconwafers，andhaslittleeffectonthechamferingangle，whichcanhelptoobtainsiliconwaferswithbetteredgequalityandlayagoodfoundationforsubsequentepitaxialprocessing．Keywords:edgepolishing;...
