电子工艺技术ElectronicsProcessTechnology222023年1月第44卷第1期摘要：TO塑封电阻器主要用于耗散脉冲能量，其可靠性的高低会影响电子系统的稳定运行。根据TO247和TO263两种典型封装结构建立了过载时等效电阻模型，通过采用低温或中温包封浆料与硅胶等材料，制备了四种保护层结构，并对1~1000Ω的典型阻值进行直流过载试验。研究结果表明：当施加电压约为1.5倍额定电压时，保护层结构为中温包封层和硅胶层的电阻器过载后变为开路失效模式，其可靠性优于其他三种产生短路失效模式的电阻器，理论模型推导与试验结果一致。该研究对TO功率器件的制造和应用具有一定的指导意义。关键词：过载性能；保护层结构；电阻模型；TO塑封电阻中图分类号：TN6文献标识码：Ａ文章编号：1001-3474（2023）01-0022-04Abstract:TOplasticsealedresistorismainlyusedtodissipatepulseenergy,anditsreliabilitywillaffectthestableoperationofelectronicsystem.BasedonTO247andTO263typicalpackagingstructures,theequivalentresistancemodelunderoverloadisestablished.Fourkindsofprotectivelayerresistorsarepreparedbyusinglowormediumtemperaturecoatingpasteandsilicagelmaterials,andDCoverloadtestsarecarriedoutontypicalresistancevaluesof1~1000Ω.Theresultsshowthatwhenthevoltageisabout1.5timesofratedvoltage,theresistorswithmedium-temperaturecladdinglayerandsilicagellayerbecomeopencircuitfailuremodeafteroverload,andtheirreliabilityisbetterthantheotherthreekindsofresistorswithshortcircuitfailuremode.Thetheoreticalmodeldeducedisconsistentwiththetestresults.ThisresearchhascertainguidingsignificanceforthemanufactureandapplicationofTOpowerdevices.Keywords:overloadperformance;protective-layerstructure;resistancemodel;TOplasticsealingresistorsDocumentCode:AArticleID:1001-3474(2023)01-0022-04不同保护层结构TO塑封电阻器的过载性能InfluenceofProtectiveLayerStructureonOverloadFailureofTO-plasticResistors喻振宁，朱沙，李淼，庞锦标，谢强YUZhenning,ZHUSha,LIMiao,PANGJinbiao,XIEQiang（中国振华集团云科电子有限公司，贵阳550018）(YunkeElectronicsCo.,Ltd.,ChinaZhenhuaGroup,Guiyang550018,China)0引言晶体管外形（TransistorOutline，TO）封装电阻器主要应用于电力电子、电源模块、射频功放等电路系统...
