Designation:F951–01StandardTestMethodforDeterminationofRadialInterstitialOxygenVariationinSiliconWafers1ThisstandardisissuedunderthefixeddesignationF951;thenumberimmediatelyfollowingthedesignationindicatestheyearoforiginaladoptionor,inthecaseofrevision,theyearoflastrevision.Anumberinparenthesesindicatestheyearoflastreapproval.Asuperscriptepsilon(e)indicatesaneditorialchangesincethelastrevisionorreapproval.1.Scope1.1Thistestmethodcoverstestsightselectionanddatareductionproceduresforradialvariationoftheinterstitialoxygenconcentrationinsiliconslicestypicallyusedinthemanufactureofmicroelectronicsemiconductordevices.1.2Thistestmethodisintendedasbotharefereeandproductiontestthroughselectionofanappropriatetestpositionplan.1.3TheinterstitialoxygencontentmaybemeasuredinaccordancewithTestMethodsF1188,F1366orF1619,DIN50438/1,JEITA61,oranyotherprocedureagreeduponbythepartiestothetest.1.4Acceptablesamplesurfacefinishesarespecifiedintheapplicabletestmethods.Thistestmethodissuitableforuseonchemicallyetched,single-sidepolishedanddouble-sidepol-ishedsiliconsliceswithnosurfacedefectsthatcouldadverselychangeinfraredradiationtransmissionthroughtheslice,pro-videdthatappropriatetestmethodsforoxygencontentareselected.1.5Thisstandarddoesnotpurporttoaddressallofthesafetyconcerns,ifany,associatedwithitsuse.Itistheresponsibilityoftheuserofthisstandardtoestablishappro-priatesafetyandhealthpracticesanddeterminetheapplica-bilityofregulatorylimitationspriortouse.2.ReferencedDocuments2.1ASTMStandards:F533TestMethodforThicknessandThicknessVariationofSiliconWafers2F1188TestMethodforInterstitialAtomicOxygenContentofSiliconbyInfraredAbsorption2F1366TestMethodforMeasuringOxygenConcentrationinHeavilyDopedSiliconSubstratesbySecondaryIonMassSpectrometry2F1619TestMethodforMeasurementofInterstitialOxygenContentofSiliconWafersbyInfraredAbsorptionSpec-troscopywithp-PolarizedRadiationIncidentattheBrew-sterAngle22.2DINStandard:DIN50438/1TestofMaterialsforSemiconductorTechnol-ogy;DeterminationofImpurityConte...
