Designation:F1619–95(Reapproved2000)StandardTestMethodforMeasurementofInterstitialOxygenContentofSiliconWafersbyInfraredAbsorptionSpectroscopywithp-PolarizedRadiationIncidentattheBrewsterAngle1ThisstandardisissuedunderthefixeddesignationF1619;thenumberimmediatelyfollowingthedesignationindicatestheyearoforiginaladoptionor,inthecaseofrevision,theyearoflastrevision.Anumberinparenthesesindicatestheyearoflastreapproval.Asuperscriptepsilon(e)indicatesaneditorialchangesincethelastrevisionorreapproval.1.Scope1.1Thistestmethod2coversdeterminationoftheabsorp-tioncoefficientduetotheinterstitialoxygencontentofcommercialmonocrystallinesiliconwafersbymeansofFou-riertransforminfrared(FT-IR)spectroscopy.Inthistestmethod,theincidentradiationisp-polarizedandincidentonthetestspecimenattheBrewsterangleinordertominimizemultiplereflections.3NOTE1—Inthistestmethod,radiationinwhichtheelectricvectorisparalleltotheplaneofincidenceisdefinedasp-polarizedradiation.NOTE2—CommitteeF-1hasbeenadvisedthatsomeaspectsofthistestmethodmaybesubjecttoapatentappliedforbyToshibaCeramicsCorporation.4TheCommitteetakesnopositionwithrespecttotheapplicabilityorvalidityofsuchpatents,butitrequestsusersofthistestmethodandotherinterestedpartiestosupplyanyinformationavailableonnon-patentedalternativesforuseinconnectionwiththistestmethod.1.2Sincetheinterstitialoxygenconcentrationispropor-tionaltotheabsorptioncoefficientofthe1107cm−1absorptionband,theinterstitialoxygencontentofthewafercanbederiveddirectlyusinganindependentlydeterminedcalibrationfactor.1.3Thetestspecimenisasingle-sidepolishedsiliconwaferofthetypespecifiedinSEMISpecificationsM1.Thefrontsurfaceofthewaferismirrorpolishedandthebacksurfacemaybeas-cut,lapped,oretched(see8.1.1.1).1.4Thistestmethodisapplicabletosiliconwaferswithresistivitygreaterthan5V·cmatroomtemperature.1.5Thisstandarddoesnotpurporttoaddressallofthesafetyconcerns,ifany,associatedwithitsuse.Itistheresponsibilityoftheuserofthisstandardtoestablishappro-priatesafetyandhealthpracticesandde...
